transistor(npn) features ? complementary t o mmst3906 marking:k2n m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 60 v v ceo collector - emitter voltage 40 v v ebo emitter - base voltage 5 v i c collector current 200 m a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo * i c = 1 0 a , i e =0 60 v collector - emitter breakdown voltage v (br) c e o * i c = 1 ma, i b =0 40 v emitter - base breakdown voltage v (br)eb o * i e = 1 0 a , i c =0 5 v collector cut - off current i cbo * v cb = 60 v, i e =0 60 n a collector cut - off current i c e o * v c e = 40 v, i b =0 500 n a v ce = 1 v, i c = 100 a 40 v ce = 1 v, i c = 1m a 70 v ce = 1 v, i c = 10m a 100 300 dc current gain h fe * v ce = 1 v, i c = 50m a 60 i c = 10m a, i b = 1 ma 0.25 v collector - emitter saturation voltage v ce(sat) * i c = 50m a, i b = 5 ma 0.3 v i c = 10m a, i b = 1 ma 0.85 v base - emitter saturation voltage v b e(sat) * i c = 50m a, i b = 5 ma 0.95 v transition frequency f t v ce = 20 v,i c = 10 ma , f=1 00 mhz 300 mhz collector output capacitance c ob v cb = 5 v, i e =0, f=1mhz 4 pf collector output capacitance c i b v e b = 0 .5 v, i e =0, f=1mhz 8 pf delay time t d 35 ns rise time t r v c c = 3 v, v be(off) = 0.5v i c = 10m a, i b 1 = 1ma 35 ns storage time t s 225 ns fall time t f v c c = 3 v, i c = 10m a, i b 1 = i b 2 =1ma 75 ns * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. so t C 3 23 1. base 2. emitter 3. collector MMST3904 1 date:2011/05 www.htsemi.com semiconductor jinyu
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